Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1810683 | Physica B: Condensed Matter | 2012 | 4 Pages |
Abstract
Shallow donors in silicon related to nitrogen-oxygen complexes have been investigated by piezospectroscopy of their hydrogenic transitions in the far infrared. Complete stress dependences up to 0.25 GPa were obtained for the 1sâ2p0 and 1sâ2p± transitions of the most prominent members of the (N, O)-family, N-O-3 and N-O-5. Very unusual for shallow donors in silicon, the symmetry of the ground state wave function is T2-like. The lifting of orientational degeneracy for stress in the ã1 0 0ã, ã1 1 1ã, and ã1 1 0ã directions is compatible with a C2v defect symmetry. Data from the other species of the (N, O)-family are indicative for the same symmetry. The microscopic structure of these centers, in part contradictory to present theoretical models, is discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H.Ch. Alt, H.E. Wagner,