Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1810684 | Physica B: Condensed Matter | 2012 | 4 Pages |
Abstract
We investigate the stability of boron dopants near the interface between crystalline Si and amorphous SiO2 through first-principles density functional calculations. An interstitial B is found to be more stable in amorphous SiO2 than in Si, so that B dopants tend to segregate to the interface. When defects exist in amorphous SiO2, the stability of B is greatly enhanced, especially around Si floating bond defects, while it is not significantly affected near Si–Si dimers, which are formed by O-vacancy defects.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Young Jun Oh, Hyeon-Kyun Noh, K.J. Chang,