| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1810686 | Physica B: Condensed Matter | 2012 | 4 Pages |
Abstract
P-on-n diodes fabricated on n-type Cz Si wafers with different Ge doping concentrations were irradiated with 2 MeV electrons and 1 MeV equivalent reactor neutrons using a wide range of fluences and examined by combining current and capacitance transient techniques.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
E. Gaubas, A. Uleckas, J.M. Rafi, J. Chen, D. Yang, J. Vanhellemont,