| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1810732 | Physica B: Condensed Matter | 2012 | 4 Pages |
Abstract
A peak in the reststrahlen region of SiC is analyzed in order to establish the origin of this peak. The peak can be associated with a thin damaged layer on the SiC wafers, and a relation is found between surface roughness and the height of this peak, by modeling the damaged layer as an additional layer when simulating the reflectivity from the wafers.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J.A.A. Engelbrecht, I.J. van Rooyen, A. Henry, E. Janzén, E.J. Olivier,