| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1811031 | Physica B: Condensed Matter | 2012 | 6 Pages |
Abstract
We report the electron resonant Raman scattering (ERRS) process related to the longitudinal optical (LO), interface optical (IO) and quasi-confined (QC) phonons in a cylindrical GaN–AlN quantum well wire (QWW). We present the differential cross-section (DCS) and study the selection rules. Results reveal that the emitted photon frequency decreases with increasing the radius because of the size-selective Raman scattering effect and the built-in electric field. The contribution to the DCS mainly stems from the GaN-type LO (LO1), QC and IO phonons when the wire is thin, but the LO1 and QC phonons are dominant for the thick wire.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Fa Lu, Cui-Hong Liu, Zheng-Li Guo,