Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1811051 | Physica B: Condensed Matter | 2012 | 5 Pages |
Abstract
The electronic structure and optical properties of N-doped β-Ga2O3 and N–Zn co-doped β-Ga2O3 are investigated by the first-principles calculation. In the N–Zn co-doped β-Ga2O3 system, the lattice parameters of a, b, c, V decrease and the formation energy of N–Zn co-doped β-Ga2O3 is smaller in comparison with N-doped β-Ga2O3. There are two shallower acceptor impurity levels in N–Zn co-doped β-Ga2O3. Comparing with N-doped β-Ga2O3, the major absorption peak is red-shifted and the impurity absorption edge is blue-shifted for N–Zn co-doped β-Ga2O3. The results show that the N–Zn co-doped β-Ga2O3 is found to be a better method to push p-type conductivity in β-Ga2O3.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Liying Zhang, Jinliang Yan, Yijun Zhang, Ting Li, Xingwei Ding,