Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1811346 | Physica B: Condensed Matter | 2011 | 7 Pages |
Abstract
Photocarrier radiometry (PCR) was used to characterize four n-type silicon wafers with different resistivity values in the 1–20 Ω cm range. Simulations of the PCR signal have been performed to study the influence of the recombination lifetime and front surface recombination velocity on them; besides, the transport parameters (carrier recombination lifetime, diffusion coefficient, and frontal surface recombination) of the wafers were obtained by means of a fitting procedure. The PCR images that are related to the lifetime are presented, and the first photoelectronic images of a porous silicon sample are obtained.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Gutiérrez, M.E. Rodríguez-García, J. Giraldo,