Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1811361 | Physica B: Condensed Matter | 2011 | 4 Pages |
Abstract
Co-doped ZnO films were fabricated using electrodeposition method on the ITO substrates. The structure of the Co-doped ZnO films was analyzed by X-ray diffraction and scanning electron microscope. The field-emission characteristics of the prepared Co-doped ZnO films were examined using diode structure in a vacuum chamber. The examined results indicate that the Co-doping cause the turn-on field increasing by increasing the concentration of the Co-dopant, probably due to the band gap changing, which could attributed to the sp–d exchange interactions between the band electrons and the localized d electrons of the Co2+ ions substituting Zn ions in the films.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Aihua Wang, Zhiguo Zhong, Cheng Lu, Linxia Lv, Xinchang Wang, Binglin Zhang,