| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1811630 | Physica B: Condensed Matter | 2011 | 4 Pages |
Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift–diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed.
Research highlights► Current polarization in ferromagnetic/organic semiconductor structure is obtained. ► Calculations are based on spin-drift–diffusion theory and Ohm's law. ► Current polarization is enhanced by tuning magnetic induction and electric fields. ► Effects of interfacial resistances and the special carriers are also discussed.
