External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire

The binding energy of a hydrogenic donor impurity in a zinc-blende InGaN/GaN cylindrical quantum well wire (QWW) is calculated in the framework of effective-mass envelope-function theory using the plane wave basis. It is shown that the donor binding energy is highly dependent on impurity position, radius of the wire, and external electric field. In addition, Stark shift dependence on radius of the QWW and external electric field is also calculated. The donor binding energy has a maximum when the impurity is located on the axis of the QWW. The donor binding energy decreases with increase in the external electric field, while Stark shift increases with increase in the external electric field or radius of the QWW.