Electronic band structure of InPxSb1−x alloys

The investigation of optoelectronic properties of zinc-blende InPxSb1−x, semiconducting alloys by pseudopotential calculations is studied. The scheme uses the local empirical pseudopotential method, which involves the disorder effect into the virtual crystal approximation by introducing an effective potential disorder. Various quantities for the alloy of interest are calculated. The obtained results show a reasonable agreement with the available experimental data. Special attention has also been given to the compositional dependence of these studied quantities.