Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1811927 | Physica B: Condensed Matter | 2011 | 5 Pages |
Abstract
âºWe design single-electron transport devices in an AlGaAs/GaAs heterostructure with three pairs of shallow-etched gates in series, in order to study the influence of the modulation effect in systems of multiple etched gates. âºIn our experiment, the middle gate is set open, and the other two sideward gates are set in closed regime. When the voltage applied to one of the sideward gates is swept from closed regime to open regime, we observe an abnormal phenomenon of a triangular-shape peak of the acoustoelectric current. âºCompared with previous experimental results and the structures of devices, we give a simple theoretical model to explain the abnormal phenomenon. In our model, we identify that change of the electron reservoir's chemical potential is considered as the physical origin of the experimental phenomenon.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L.B. Liu, J. Gao, H.Z. Guo, W. Zhang, J.H. He,