Article ID Journal Published Year Pages File Type
1812051 Physica B: Condensed Matter 2011 5 Pages PDF
Abstract

First-principles calculations have been performed to investigate the doping behaviors of Al and N dopant impurities in ZnO. According to the results, in the Al mono-doping case, the impurity states are quite delocalized, the corresponding effective masses are small, and the formation energy is as low as −9.71 eV. In the N mono-doping case, the impurity states are localized, the effective masses are large, and the formation energy is high (4.55 eV in the most favorable extreme O-rich conditions). In the Al–N codoping case, the corresponding effective masses are marked decreased compared to the N mono-doping situations, and the formation energy of the N–Al–N system is as low as −2.54 eV in the O-rich condition. The above results can explain the electrical behaviors of the doped or codoped ZnO systems observed in experiments.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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