Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1812195 | Physica B: Condensed Matter | 2010 | 4 Pages |
Abstract
In the present paper thermally stimulated current measurements have been made in a-Ge22Se78âxBix (x=0, 10) thin films in order to determine trap parameters such as trap depth and trap density. Trap depth has been calculated using the initial rise method proposed by Garlick and Gibson. The trap depth is found to be 0.41 and 0.30Â eV for x=0 and 10, respectively. The trap density (Nt) was also calculated, which was found to be 2.08Ã1017 and 1.48Ã1016Â cmâ3 for x=0 and 10, respectively. The decrease in trap density on Bi addition is explained in terms of the structure of the ternary alloy.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. Yadav, D. Kumar, R.K. Pal, S.K. Sharma, A. Kumar,