| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1812257 | Physica B: Condensed Matter | 2011 | 4 Pages |
Abstract
The effects of intense high-frequency laser field on photoionization cross-section and binding energy of shallow-donor impurities in GaAs/GaAlAs quantum dots are calculated using variational method with the effective-mass approximation. From these calculations, it has been concluded that the dependences of the impurity binding energy and photoionization cross-section on the intense laser field are very significant.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
U. Yesilgul, S. Sakiroğlu, E. Kasapoglu, H. Sari, I. Sökmen,