Ultraviolet photoresponse properties of zinc oxide on type IIb diamond heterojunction

Heterojunctions between ZnO and diamond are difficult to synthesize due to doping problems. In this work, a successful heterojunction that is sensitive to ultraviolet (UV) light has been fabricated using sputtered ZnO thin film on type IIb diamond, where boron activation at room temperature is possible at low concentrations. Current–voltage measurements show a p–n characteristic with significant UV photoresponse properties. The threshold voltage under UV illumination is decreased by 0.4 V, which can be predicted using a theoretical model.