Radiation effects on silicon bipolar transistors caused by 3-10Â MeV protons and 20-60Â MeV bromine ions

The current gain degradation in silicon NPN bipolar junction transistors (BJTs) was examined under irradiation with 3-10 MeV protons and 20-60 MeV bromine (Br) ions with various dose levels. To characterize the radiation damage of the NPN BJTs, the ionizing dose Di and displacement dose Dd as a function of chip depth in the NPN BJTs were calculated for both the protons and Br ions with different energies. Based on the irradiation testing and calculated results, it is shown that the current gain degradation of NPN BJTs is sensitive to the ratio of Dd/(Dd+Di) in the sensitive region given by protons and Br ions. The irradiation particles (protons and Br ions), which give larger Dd/(Dd+Di) at a given total dose, would generate more severe damage to the NPN BJTs. The reciprocal of the gain variation as a function of the displacement dose was compared, showing that the Messenger-Spratt equation becomes relevant to describe the experimental data, when the ratio of the Dd/(Dd+Di) are larger and the displacement dose are higher than a certain value.