Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1812364 | Physica B: Condensed Matter | 2010 | 4 Pages |
Abstract
The effects of sapphire annealing on high-quality AlN growth by molecular beam epitaxy have been studied. AlN thin films grown on annealed sapphire (1200 °C, 12 h) were hole-free. The full width at half maximum of the (0 0 0 2) and (101¯5)ω-rocking curves for 260 nm-thick AlN thin films grown on annealed sapphires were 200 and 900 arcsec, respectively. The substantial improvement of AlN quality is ascribed to reduction of dislocation density by sapphire annealing.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yun Liu, Jia Zhang,