Affects of Al concentration on GaN/AlxGa1−xN new modeled multilayer nano-heterostructure

This paper reports affects of variation in aluminium (Al) composition over the energy band structure, potential distribution, electron-hole densities and space charge densities calculated for proposed and simulated one dimensional GaN/AlxGa1−xN multilayer new modeled nano-heterostructure. The total size of the sample was 288 nm grown on pseudomorph GaN including ohmic contact with the metal on the edges. The quantum region is over the whole heterostructure but the interesting region in the heterostructure is found in between 100 and 196 nm, which can be applicable for a particular device application. Less pronounced variations in the energy band structure and potential distribution are observed within the active quantum regions (100-196 nm) and more pronounced variations within the quantum regions (50-100 and 188-238 nm). More observable effects are observed in the space charge densities and hole densities within the active quantum regions while electron densities were found to vary in both regions. These results will lead to the new opto-electronic devise for a particular application in the emerging areas of nanotechnology.