Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1812502 | Physica B: Condensed Matter | 2010 | 6 Pages |
Abstract
In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The (I-V)-T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (I-V)-T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential Φb0¯ of about 0.67 and 0.54 V and standard deviations Ïs2 of about 8.4Ã10â3 and 4.2Ã10â3 V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2 A cmâ2 Kâ2) of p-type GaAs and the mean barrier height Φb0¯ is closed to the band gap of GaAs. The obtained values prove that the I-V-T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Z. Harrabi, S. Jomni, L. Beji, A. Bouazizi,