Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1812543 | Physica B: Condensed Matter | 2010 | 4 Pages |
Aluminum doped zinc oxide (AZO) films were deposited by radio frequency (RF) magnetron sputtering on the Al2O3-coated and bare soda lime glass substrates, respectively. The properties of AZO films were analyzed using X-ray diffraction (XRD), atomic force microscope (AFM), Hall effect measurement and ultraviolet–visible (UV–vis) spectrophotometer. The results of XRD measurement showed that all the AZO thin films had a preferentially oriented (0 0 2) peak and the intensity of (0 0 2) peak decreased with increase in the thickness of the Al2O3 buffer layer. The Hall measurement results showed that the conductivity of the AZO film with a 3 nm Al2O3 buffer layer had a remarkable 41.3% increase when compared with that of the single AZO film. The figures of merit from optical transmittance and electrical conductivity for AZO films on the 3 nm Al2O3-coated and bare glass substrates were 5466 and 3772 S cm−1, respectively. All the results suggested that the use of an ultrathin Al2O3 buffer layer effectively improved the quality of AZO film on the glass substrate.