Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1812597 | Physica B: Condensed Matter | 2010 | 4 Pages |
Abstract
Raman spectra of Al- and N-doped 6 H-SiC crystal samples with different doping levels were measured. The first-order Raman spectra of the samples were shifted to higher frequency when the doping concentrations were increased. Compared with Al-doped samples, the intensity of A1 longitudinal optical mode of N-doped ones changed obviously, which reflected the different doping concentrations. The second-order Raman spectra were not dependent on the doping types and concentrations.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Xiang-Biao Li, Zhi-Zhan Chen, Er-Wei Shi,