Structural and optical investigations of AlxGa1−xAs:Si/GaAs(1 0 0) MOCVD heterostructures

AlxGa1−xAs:Si/GaAs(1 0 0) heterostructure and homoepitaxial GaAs:Si/GaAs(1 0 0) structures grown by MOCVD were investigated. The changes observed in our experiments with highly doped AlxGa1−xAs alloys, led not only to the reconstruction of the electron density and formation of deep levels (DX-centers) with subsequent relaxation of the crystal lattice in the alloy, but also indicate at the formation of quaternary AlxGa1−x−ySiy+zAs1−z substitution-type alloy grown on GaAs(1 0 0).