Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1812732 | Physica B: Condensed Matter | 2010 | 4 Pages |
Abstract
This paper describes the mechanical properties of poly (polycrystalline) 3C-SiC thin films with N2in situ doping. In this work, in situ doped poly 3C-SiC film was deposited by using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200 °C using single-precursor hexamethyildisilane: Si2(CH3)6 (HMDS) as Si and C precursors, and 0∼100 sccm N2 as the dopant source gas. The mechanical properties of doped poly 3C-SiC thin films were measured by nano-indentation. Young's modulus and hardness were measured to be 285 and 35 GPa at 0 sccm N2, respectively. Young's modulus and hardness decreased with increasing N2 flow rate. Surface morphology was evaluated by atomic force microscopy (AFM) according to N2 flow rate.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Kang-San Kim, Ki-Bong Han, Gwiy-Sang Chung,