Momentum-dependent resonant inelastic X-ray scattering at the Si K edge of 3C-SiC: A theoretical study on a relation between spectra and valence band dispersion

We theoretically demonstrate that a resonant inelastic X-ray scattering (RIXS) with a sizable momentum transfer can be utilized to study valence band dispersion for broad band materials. We take RIXS at the Si K edge of 3C-SiC as a typical example. The RIXS spectra are calculated by systematically changing the transferred momentum, an incident photon polarization and an incident photonenergy, on the basis of an ab initio calculation. We find that the spectra depend heavily on both the transferred momentum and the incident photon polarization, and the peaks in the spectra correspond to the energies of the valence bands. We conclude that the information on the energy dispersion of valence bands can be extracted from the transferred momentum dependence of the RIXS spectra. These findings lead to further application for RIXS when investigating the band structure of broad band materials.