| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1813029 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
The effect of finite energy of intravalley acoustic phonons on the electric field dependence of the temperature of the non-equilibrium carriers in a quantum surface has been studied here. The calculations have been made, for a rather pure material, at low lattice temperature. Numerical results are obtained for GaAs and Si. The results are interesting being significantly different from what one obtains by neglecting the phonon energy.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. Nag, D.P. Bhattacharya,