Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813104 | Physica B: Condensed Matter | 2008 | 4 Pages |
Abstract
All-oxide heterojunction was fabricated by depositing manganite (La0.8Bi0.2)0.67Ca0.33MnO3 (LBCMO) thin layer on n-type semiconductive SrNb0.008Ti0.992O3 (SNTO) substrate. The current-voltage curve (I-V) of the heterostructure showed rectifying characteristics at temperatures ranging from 80 to 200Â K and non-rectifying behavior at temperatures higher than 240Â K. The current flowing through the heterojunction at a given biased voltage can be modulated by the external magnetic field. The effect of the magnetic field on the magnetoresistance (MR) was more pronounced at a negative bias voltage (MR=â23.6%) than that at a positive bias voltage (MR=â4.4%) under the magnetic field of 10Â kOe.
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Condensed Matter Physics
Authors
L. Yan, X.Y. Zhang, H.J. Liu, C.K. Ong,