Modulation of the transport behavior by magnetic field in (La0.8Bi0.2)0.67Ca0.33MnO3/SrNb0.008Ti0.992O3 oxide heterojunction

All-oxide heterojunction was fabricated by depositing manganite (La0.8Bi0.2)0.67Ca0.33MnO3 (LBCMO) thin layer on n-type semiconductive SrNb0.008Ti0.992O3 (SNTO) substrate. The current-voltage curve (I-V) of the heterostructure showed rectifying characteristics at temperatures ranging from 80 to 200 K and non-rectifying behavior at temperatures higher than 240 K. The current flowing through the heterojunction at a given biased voltage can be modulated by the external magnetic field. The effect of the magnetic field on the magnetoresistance (MR) was more pronounced at a negative bias voltage (MR=−23.6%) than that at a positive bias voltage (MR=−4.4%) under the magnetic field of 10 kOe.