Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813125 | Physica B: Condensed Matter | 2010 | 4 Pages |
Abstract
Thermally oxidized 0.1 and 1 μm thick n-type PbTe:In films were studied in this work. Two main processes induced during the thermal treatment in oxygen atmosphere were identified. These are the formation of an oxide phase on the surface and generation of acceptor states of oxygen along grain boundaries inside a film. The latter process causes inversion of the type of electrical conductivity in PbTe from n to p. Electron beam-induced current (EBIC) measurements of minority electron diffusion length in oxidized 0.1 μm thick PbTe:In film showed diffusion length increase with increasing temperature similar to the wide band gap semiconductors.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
E. Shufer, Z. Dashevsky, V. Kasiyan, E. Flitsiyan, L. Chernyak, K. Gartsman,