| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1813141 | Physica B: Condensed Matter | 2010 | 11 Pages |
Abstract
Our results for the bandgap changes in highly excited intrinsic (heavily doped-HD) Si (Ge) for any majority-carrier density N and temperature T have been investigated and expressed in terms of (i) the bandgap narrowing (BGN>0) due to many-body carrier–carrier interactions and screening effect on carrier-impurity (or electron–hole) potential energies, (ii) the bandgap widening (BGW<0) due to the effects of Fermi Dirac statistics, and (iii) the apparent BGN defined by ABGN≡BGN+BGW
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H. Van Cong,