Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813308 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
It has been revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkel pairs in silicon can be stable at temperatures of about or higher than 100 K. A broad DLTS peak with activation energy of 0.14–0.17 eV can be identified as related to Frenkel pairs. This peak anneals out at temperatures of 120−140 K. Experimental evidences are presented that becoming more mobile under forward current injection the self-interstitials change their charge state to a less positive one.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L.F. Makarenko, S.B. Lastovski, F.P. Korshunov, L.I. Murin, M. Moll,