Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813310 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 °C in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance of two absorption bands positioned at 833.4 and 842.4 cmâ1 has been found upon annealing of the divacancy related absorption band at 2767 cmâ1. The 833.4 cmâ1 band is assigned to a divacancy-oxygen defect. The 842.4 cmâ1 band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect formed via interaction of mobile V3 with Oi atoms.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L.I. Murin, B.G. Svensson, J.L. Lindström, V.P. Markevich, C.A. Londos,