Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813325 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
For nitrogen-implanted silicon the response of the crystal lattice to mechanical stress shows no difference to undoped samples, which means that nitrogen has no influence on strain fields in silicon. However, after implantation of the donors P, As and Sb a significant strain relaxation is observed which is probably due to dislocations. We show that this relaxation caused by n-doping also extends to undoped areas which are adjacent to the implanted region.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Nicole Santen, Reiner Vianden,