| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1813333 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
New method of silicon nanoclusters growth was proposed. Silicon nanoclusters are formed in silicon dioxide under high power density electron beam irradiation. The irradiated region of SiO2 is overheating due to low heatconductivity. The temperature of overheating is depended on electron current density. It was estimated by Monte-Carlo method. This work was devoted to study of nanoclusters formation at different electron beam power density.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
E.V. Kolesnikova, M.V. Zamoryanskaya,