Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813334 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
Poorly known features of a microdefect (MD) delineation in dislocation-free single-crystal silicon by the defect-contrast (DC) etching technique were studied experimentally using DC-solutions of the HF-CrO3-H2O and HF-K2Cr2O7-H2O systems. The dependences of shape and size of an individual MD-trace on the etchant type, etch time (etch depth), and microdefect type have been demonstrated. Taking into account of these dependences allows one to improve selectivity and sensitivity of the technique. Compositions of the most effective DC-etchants were noted.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Alexandra E. Usenka, Anatolii V. Yukhnevich,