Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250Â MeV krypton implantation

Silicon diodes with pn-junction irradiated with high-energy krypton ions (energy 250 MeV, fluences from 108 to 109 cm-2) were studied, along with diodes irradiated with electrons (energy 3.5 MeV, fluence 1015 cm−2). Diodes irradiated with krypton ions are different in the distance δ between the metallurgical border of the abrupt asymmetric p+n-junction and the maximum of primary vacancy distribution. Current-voltage characteristics and kinetics of reverse resistance recovery of two groups of diodes δ1≈26.4 μm and δ2≈14.5 μm were investigated. It is established that an increase in distance δ resulted in a minor effect on kinetics of reverse resistance recovery of diodes but allows to obtain the decrease of reverse currents by 2-3 times. It is shown that in the transient process of switching of the diodes irradiated with krypton ion fluence of 108 cm−2, the time of reverse resistance recovery may be divided into two intervals (two phases), which are different in the rate of reverse current decrease.