Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813401 | Physica B: Condensed Matter | 2009 | 5 Pages |
Abstract
The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, N.T. Son,