Article ID Journal Published Year Pages File Type
1813401 Physica B: Condensed Matter 2009 5 Pages PDF
Abstract

The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
, , , , , ,