Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813407 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
For both the implantation ions, there is about no difference between the values found for the damage efficiency per ion for the four different orientations. This together with the high value (around 5 times higher than that found in Si), gives rise to the assumption of amorphous pocket formation per incident ion, i.e. direct impact amorphization, already at low implantation fluences. At higher fluences, when collision cascades overlap, there is a growth of the already amorphized regions.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Hayes, A. Schroeter, E. Wendler, W. Wesch, F.D. Auret, J.M. Nel,