Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813420 | Physica B: Condensed Matter | 2017 | 4 Pages |
Abstract
In this study, SrAl2O4:Eu2+,Dy3+ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at â¼530 nm. This emission was attributed to 4f65d1â4f7 transition of Eu2+. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
O.M. Ntwaeaborwa, P.D. Nsimama, J.T. Abiade, E. Coetsee, H.C Swart,