| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1813533 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
We have investigated a single crystal of the wide bandgap II-VI semiconductor ZnSe. The sample was highly resistive due to heavy compensation of this n-type semiconductor. In low transverse fields, clear signs of conversion from a paramagnetic to a diamagnetic fraction are observed, at about 60Â K. The data are interpreted as delayed electron capture by paramagnetic muonium, forming the negatively charged state Mu-. The implications with respect to the electrical activity of muonium, and by analogy hydrogen, in this semiconductor are analyzed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
R.C. Vilão, J.M. Gil, A. Weidinger, H.V. Alberto, J. Piroto Duarte, B.F.O. Costa, N. Ayres de Campos, R.L. Lichti, K.H. Chow, S.P. Cottrell, S.F.J. Cox,