Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813837 | Physica B: Condensed Matter | 2008 | 5 Pages |
Abstract
The Raman spectra of nanostructures formed on silicon Si single-crystalline wafers by implantation with hydrogen ions of fluencies ranging within D∼2×1016–3×1017 cm−2 are reported. The presence of both crystalline and amorphous silicon phases were found in the spectra. A non-monotonic growth in the intensities of the peaks originating from the crystalline and the amorphous phases with a dose of the implantation was registered. A ratio of the intensities of the main peaks of the amorphous to the crystalline Si phases also demonstrated a non-monotonic behaviour (“high-dose effect”). Possible reasons and mechanisms of the non-monotonic dependence of a “degree” of amorphization on a dose of the implantation (or irradiation) are discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Sergey V. Ovsyannikov, Vsevolod V. Shchennikov Jr, Vladimir V. Shchennikov, Yuri S. Ponosov, Irina V. Antonova, Sergey V. Smirnov,