Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813897 | Physica B: Condensed Matter | 2008 | 5 Pages |
Abstract
In this study, the intense laser-field dependence of intersubband absorption coefficient for 1–2 transition in GaAs/Ga1−xAlxAs DGQW under the electric field is investigated. The obtained results show that by changing the laser intensity together with the electric field and the well parameters (well and barrier widths) the desired energy range or spectral range of interest for intersubband and also interband absorption peak position may be tuned. This tunability gives a possibility for near-infrared electro-absorption modulators and quantum well infrared detectors.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
E. Kasapoglu, I. Sökmen,