| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1813900 | Physica B: Condensed Matter | 2008 | 4 Pages |
Abstract
An analytical model for the noise spectrum of nanometric Schottky-barrier diodes (SBD) is developed. The calculated frequency dependence of the spectral density of current fluctuations exhibits resonances in the terahertz domain which are discussed and analyzed as functions of the length of the diode, free carrier concentration, length of the depletion region and applied voltage. A good agreement obtained with direct Monte Carlo simulations of GaAs SBDs operating from barrier-limited to flat-band conditions fully validates the proposed approach.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
F.Z. Mahi, A. Helmaoui, L. Varani, P. Shiktorov, E. Starikov, V. Gruzhinskis,