Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1813924 | Physica B: Condensed Matter | 2009 | 5 Pages |
Abstract
The electronic structure and the optical properties of In6S7 crystal are calculated by the first-principles full-potential linearized augmented plane wave method (FP-LAPW) using density functional theory (DFT) in its generalized gradient approximation (GGA). The calculated band structure shows that the In6S7 is a semiconductor with a direct band gap in good agreement with experimental studies. Furthermore, the dielectric tensor and the optical properties, such as absorption coefficient, refractive index, extinction coefficient, energy-loss spectrum and reflectivity, are derived and analyzed in the study.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H. Ben Abdallah, R. Bennaceur,