| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1813964 | Physica B: Condensed Matter | 2009 | 5 Pages |
Abstract
The amplitudes of terahertz pulses emitted from the surfaces of InAs, InSb, InGaAs, GaAs and Ge after their excitation by femtosecond 1 μm laser pulses was compared. It has been found that this effect is most efficient in p-type InAs. The mechanisms leading to the terahertz emission are investigated and discussed. It has been concluded that in the majority of the investigated semiconductors the main contribution to THz pulse emission comes from the electrical-field-induced optical rectification effect.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Bičiūnas, V. Pačebutas, A. Krotkus,