Electron-LO-phonon interaction in wurtzite GaN quantum wells under a magnetic field

We calculate the electron-LO-phonon relaxation rates in wurtzite GaN quantum wells in the presence of a magnetic field parallel to the growth direction. Using the dielectric continuum model (DCM), we are able to include contributions from both the interface and the quasi-confined phonon modes. The relaxation rate expression takes the phonon dispersion into account, and is applicable to all phonon modes. We find that the relaxation rates show strong oscillations as a function of the applied magnetic field. In relatively wide (8 nm) quantum wells, the inclusion of interface phonon mode decreases this oscillation amplitude. But in thin wells (5 nm), the interface phonon mode is of the same importance as the quasi-confined mode, and it strongly modifies the oscillation behavior.