Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1814059 | Physica B: Condensed Matter | 2008 | 4 Pages |
Abstract
ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10–20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall networks were crystallized in a wurtzite structure with their height parallel to the 〈0 0 0 1〉 direction. Photoluminescence (PL) of the ZnO nanowall networks exhibited free excitons (FEs), donor-bound exciton (D0X), donor–acceptor pair (DAP), and free exciton to acceptor (FA) emissions. The growth mechanism of the ZnO nanowall networks was discussed, and their hydrogenation was also studied.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.C. Su, Y.M. Lu, Z.Z. Zhang, B.H. Li, D.Z. Shen, B. Yao, J.Y. Zhang, D.X. Zhao, X.W. Fan,