| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1814326 | Physica B: Condensed Matter | 2008 | 6 Pages |
Abstract
Optical and structural properties of GaSb and Te-doped GaSb single crystals are reported herein. Utilizing the photoreflectance technique, the band gap energy for doped samples was obtained at 0.814 eV. Photoluminescence (PL) spectra showed a peak at 0.748 eV that according to this research, belongs to electronic states of pure GaSb and not to the longitudinal optical (LO) phonon replica as has been reported by other authors. Analysis of the full width at half maximum (FWHM) values of X-ray diffraction, as well as micro-Raman peaks showed that the inclusion of Te decreases the crystalline quality.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L. Tirado-Mejía, J.A. Villada, M. de los Ríos, J.A. Peñafiel, G. Fonthal, D.G. Espinosa-Arbeláez, H. Ariza-Calderón, M.E. Rodríguez-García,