Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1814395 | Physica B: Condensed Matter | 2009 | 4 Pages |
Abstract
We measured transport and thermodynamic properties of the valence-fluctuating phase of SmS up to 8.5 kbar, and found a bump structure in the temperature dependence of the electrical resistivity and a Schottky-type anomaly in the temperature dependence of the thermal expansion coefficient at a characteristic temperature T0T0. We also observed that the absolute value of the Hall constant rapidly increases below T0T0. From these results, we argue that the steep rise of the electrical resistivity below T0T0 is inherent to golden SmS and can be ascribed to the decrease in the carrier concentration possibly due to the pseudo gap formation.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K. Imura, K. Matsubayashi, H.S. Suzuki, K. Deguchi, N.K. Sato,