| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1814642 | Physica B: Condensed Matter | 2007 | 6 Pages |
Abstract
The contact properties of ZrNx on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current–voltage (I–V) and capacitance–voltage (C–V) measurements. The zero-bias barrier heights evaluated by I–V were in the range of 0.55–0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Pelleg, A. Bibi, M. Sinder,