Photoconductive studies on electron beam evaporated CdSe films

Thin CdSe films were electron beam evaporated. The CdSe powder synthesized in the laboratory by a chemical method was used as source for the deposition of films. Clean glass and titanium substrates were used as substrates. The substrate temperature was varied in the range of 30-250 °C. X-ray diffraction studies indicated polycrystalline hexagonal structure. The band gap was 1.65 eV. The grain size was 15-30 nm with increase of substrate temperature. Photoconductive cells fabricated with the doped and undoped films have exhibited high photosensitivity and high signal to noise ratio. The current voltage characteristics were linear.